The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Dec. 16, 2004
Eun Soo Nam, Daejeon, KR;
Ho Young Kim, Daejeon, KR;
Myoung Sook OH, Daejeon, KR;
Dong Yun Jung, Daejeon, KR;
Seon Eui Hong, Daejeon, KR;
Kyoung Ik Cho, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Ho Young Kim, Daejeon, KR;
Myoung Sook Oh, Daejeon, KR;
Dong Yun Jung, Daejeon, KR;
Seon Eui Hong, Daejeon, KR;
Kyoung Ik Cho, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon-Shi, KR;
Abstract
Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.