The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Jul. 26, 2004
Rare earth silicate single crystal and process for production of rare earth silicate single crystals
Kazuhisa Kurashige, Hitachinaka, JP;
Naoaki Shimura, Hitachinaka, JP;
Hiroyuki Ishibashi, Hitachinaka, JP;
Akihiro Gunji, Hitachinaka, JP;
Mitsushi Kamada, Hitachinaka, JP;
Kazuhisa Kurashige, Hitachinaka, JP;
Naoaki Shimura, Hitachinaka, JP;
Hiroyuki Ishibashi, Hitachinaka, JP;
Akihiro Gunji, Hitachinaka, JP;
Mitsushi Kamada, Hitachinaka, JP;
Hitachi Chemical Co., Ltd., Tokyo, JP;
Abstract
When produced as a single crystal ingot, a rare earth silicate single crystalcan be formed by cutting out from the single crystal ingot. The single crystalhas a crystal face Fwhose Miller indices can be determined by X-ray diffraction. The crystal face Fis composed of a plurality of smooth partial region surfaces (for example, the partial region surface fA and partial region surface fB), the plurality of partial region surfaces each have an area detectable by X-ray diffraction, and the angles θ formed between the normal vectors of the plurality of partial region surfaces satisfy the following inequality:0.1°≦θ≦2.0°.  (1)