The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7263012 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 28, 2007

Filed:

Feb. 23, 2004
Applicant:

Kazuo Sato, Kyoto, JP;

Inventor:

Kazuo Sato, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor storage device includes: a plurality of memory array cells (hereinafter, referred to as cells); a circuit arranged in each of the cells for precharge of each bit line of the cells to a predetermined voltage; and a circuit for comparing, for each bit line, an output voltage of each bit line of the cells selected for reading out data to an output voltage of each bit line of cells selected for reference. When the data is read out, the voltage value for precharge of the bit line of the cells selected for reading out data and the voltage value for precharge of the bit line of the cells selected for reference are temporarily set to different values. Thus, all the output bits of the cells selected for reading out data can be read out by a single read out operation.


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Sato, Kazuo. (2007). Semiconductor storage device (U.S. Patent No. 7263012). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7263012

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