The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Dec. 30, 2004
Katsumi Aoki, Yokohama, JP;
Kenichi Takeda, Yokohama, JP;
Tetsuro Fukui, Yokohama, JP;
Hiroshi Funakubo, Kawasaki-shi, Kanagawa-ken, JP;
Shoji Okamoto, Matsuyama, JP;
Goji Asano, Nagareyama, JP;
Katsumi Aoki, Yokohama, JP;
Kenichi Takeda, Yokohama, JP;
Tetsuro Fukui, Yokohama, JP;
Hiroshi Funakubo, Kawasaki-shi, Kanagawa-ken, JP;
Shoji Okamoto, Matsuyama, JP;
Goji Asano, Nagareyama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Other;
Abstract
To provide a dielectric layer of crystal structure preferentially or uniaxially oriented on a common substrate. A dielectric element of desired quality can be stably produced even on a common substrate for film-making by forming a lower electrode layer, dielectric layer and upper electrode layer in this order on a substrate, wherein each of these layers are designed to be preferentially or uniaxially oriented, and to have a specific half bandwidth, determined by fitting a pseudo-Voigt function.