The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Oct. 29, 2003
Hideki Okumura, Yokohama, JP;
Hitoshi Kobayashi, Yokohama, JP;
Masanobu Tsuchitani, Kawasaki, JP;
Akihiro Osawa, Himeji, JP;
Satoshi Aida, Kawasaki, JP;
Shigeo Kouzuki, Kawasaki, JP;
Masaru Izumisawa, Kawasaki, JP;
Hideki Okumura, Yokohama, JP;
Hitoshi Kobayashi, Yokohama, JP;
Masanobu Tsuchitani, Kawasaki, JP;
Akihiro Osawa, Himeji, JP;
Satoshi Aida, Kawasaki, JP;
Shigeo Kouzuki, Kawasaki, JP;
Masaru Izumisawa, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.