The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Oct. 22, 2004
Sergey Pidin, Kawasaki, JP;
Sergey Pidin, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device has: active regions including a p-type active region; an insulated gate electrode structure formed on each of the active regions, and having a gate insulating film and a gate electrode formed thereon; side wall spacers formed on side walls of the insulated gate electrode structures; source/drain regions having extension regions having the opposite conductivity type to that of the active region and formed on both sides of the insulated gate electrode structures and source/drain diffusion layers having the opposite conductivity type and formed in the active regions outside of the side wall spacers; first recess regions formed by digging down the n-type source/drain regions in the p-type active region from surfaces of the n-type source/drain regions; and a first nitride film having tensile stress formed covering the p-type active region and burying the first recess regions.