The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Feb. 06, 2004
Tetsuro Asano, Oizumi-machi, JP;
Mikito Sakakibara, Kumagaya, JP;
Toshikazu Hiraj, Oizumi-machi, JP;
Tetsuro Asano, Oizumi-machi, JP;
Mikito Sakakibara, Kumagaya, JP;
Toshikazu Hiraj, Oizumi-machi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
With a microwave FET, the internalized Schottky junction capacitance or pn junction capacitance is small and these junctions are weak against static electricity. However, with a microwave device, a protecting diode could not be connected since the increase of parasitic capacitance resulting from this method causes degradation of the high frequency characteristics. Therefore, to eliminate this problem, a semiconductor device is provided, wherein two paths, extending from a gate electrode pad to a gate electrode on an operating region, are arranged, with one path running near a source electrode pad, the other path running near a drain electrode pad, and at the respective parts where a path becomes close to a pad, the abovementioned protecting elements are connected between the gate electrode and source electrode and between the gate electrode and drain electrode to improve the electrostatic breakdown voltage of the FET from approximately 100V to 700V.