The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2007

Filed:

Apr. 11, 2005
Applicants:

You Kondoh, Yamato, JP;

Satoshi Watanabe, Kanagawa, JP;

Yawara Kaneko, Chigasaki, JP;

Shigeru Nakagawa, Goleta, CA (US);

Norihide Yamada, Tokyo, JP;

Inventors:

You Kondoh, Yamato, JP;

Satoshi Watanabe, Kanagawa, JP;

Yawara Kaneko, Chigasaki, JP;

Shigeru Nakagawa, Goleta, CA (US);

Norihide Yamada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.


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