The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
May. 26, 2005
Kazuyuki Sugahara, Hyogo, JP;
Naoki Nakagawa, Hyogo, JP;
Yoshihiko Toyoda, Hyogo, JP;
Takao Sakamoto, Hyogo, JP;
Kazuyuki Sugahara, Hyogo, JP;
Naoki Nakagawa, Hyogo, JP;
Yoshihiko Toyoda, Hyogo, JP;
Takao Sakamoto, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.