The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2007

Filed:

Feb. 22, 2005
Applicants:

Lawrence C. Gunn, Iii, Encinitas, CA (US);

Giovanni Capellini, Rome, IT;

Gianlorenzo Masini, Carlsbad, CA (US);

Inventors:

Lawrence C. Gunn, III, Encinitas, CA (US);

Giovanni Capellini, Rome, IT;

Gianlorenzo Masini, Carlsbad, CA (US);

Assignee:

Luxtera, Inc., Carlsbad, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention discloses an integration flow of germanium into a conventional CMOS process, with improvements in performing selective area growth, and implementing electrical contacts to the germanium, in a way that has minimal impact on the preexisting transistor devices. The present invention also provides methods to integrate the germanium without impacting the optical or electrical performance of these devices, except where intended, such as in a germanium photodetector, or germanium waveguide photodetector.


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