The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Nov. 21, 2003
Applicants:
Dharmesh Jawarani, Round Rock, TX (US);
Nigel G. Cave, Austin, TX (US);
Michael Rendon, Austin, TX (US);
Inventors:
Dharmesh Jawarani, Round Rock, TX (US);
Nigel G. Cave, Austin, TX (US);
Michael Rendon, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/425 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device, a relatively deep germanium implant and activation thereof precedes deposition of the nickel for nickel silicide formation. The activation of the germanium causes the lattice constant in the region of the implant to be increased over the lattice constant of the background substrate, which is preferably silicon. The effect is that the lattice so altered avoids formation of nickel disilicide. The result is that the nickel silicide spiking is avoided.