The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2007

Filed:

Oct. 11, 2002
Applicants:

Kazuhiro Ohba, Miyagi, JP;

Kazuhiko Hayashi, Kanagawa, JP;

Hiroshi Kano, Kanagawa, JP;

Kazuhiro Bessho, Kanagawa, JP;

Tetsuya Mizuguchi, Kanagawa, JP;

Yutaka Higo, Miyagi, JP;

Masanori Hosomi, Miyagi, JP;

Tetsuya Yamamoto, Kanagawa, JP;

Hiroaki Narisawa, Miyagi, JP;

Takeyuki Sone, Miyagi, JP;

Keitaro Endo, Miyagi, JP;

Shinya Kubo, Miyagi, JP;

Inventors:

Kazuhiro Ohba, Miyagi, JP;

Kazuhiko Hayashi, Kanagawa, JP;

Hiroshi Kano, Kanagawa, JP;

Kazuhiro Bessho, Kanagawa, JP;

Tetsuya Mizuguchi, Kanagawa, JP;

Yutaka Higo, Miyagi, JP;

Masanori Hosomi, Miyagi, JP;

Tetsuya Yamamoto, Kanagawa, JP;

Hiroaki Narisawa, Miyagi, JP;

Takeyuki Sone, Miyagi, JP;

Keitaro Endo, Miyagi, JP;

Shinya Kubo, Miyagi, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G11B 5/33 (2006.01); G11B 5/127 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.


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