The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2007

Filed:

Feb. 11, 2003
Applicants:

Jason Stauth, Concord, NH (US);

Richard Dickinson, Concord, NH (US);

Glenn Forrest, Nottingham, NH (US);

Ravi Vig, Bow, NH (US);

Inventors:

Jason Stauth, Concord, NH (US);

Richard Dickinson, Concord, NH (US);

Glenn Forrest, Nottingham, NH (US);

Ravi Vig, Bow, NH (US);

Assignee:

Allegro Microsystems, Inc., Worcester, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated sensor includes a magnetoresistance element electrically coupled to a device disposed on or integrated in a silicon substrate. A conductor is provided proximate to the magnetoresistance element. The integrated sensor can be used to provide various devices, such as a current sensor, a magnetic field sensor, or an isolator. Further, the integrated sensor can be used in an open loop configuration or in a closed loop configuration in which an additional conductor is provided. The magntoresistance element may be formed over the silicon substrate or on a separate, non-silicon substrate. Also described is an integrated sensor comprising a substrate, a magnetic field transducer disposed over a surface of the substrate, and a conductor disposed over the surface of the substrate proximate to the magnetic field transducer. The magnetic field transducer can be a Hall effect transducer or a magnetoresistance element.


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