The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Jul. 20, 2004
Mary Y. Chen, Oak Park, CA (US);
Donald A. Hitko, Malibu, CA (US);
Mary Y. Chen, Oak Park, CA (US);
Donald A. Hitko, Malibu, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
In one embodiment, an optoelectronic device is provided having a pin photo diode including a semi-insulating substrate or layer, with a patterned implant region of a first dopant type. The pin photo diode includes an upper layer having semiconductor material with a second dopant type. An intermediate layer is provided having a substantially intrinsic semiconductor material. An upper layer contact is provided having a portion with a generally circular interior facing edge. The implant region has a first portion having an outer periphery substantially nonoverlapping with the interior facing edge of the upper layer contact. The implant region includes a contact portion located beyond the upper layer contact. A connecting portion couples the first portion and the contact portion of the implant region. In one embodiment, the device includes a heterojunction bipolar transistor coupled to the pin photo diode. The transistor may have a patterned implant region in the semi-insulating substrate or layer comprising the first dopant type.