The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7259439 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 21, 2007

Filed:

Dec. 26, 2002
Applicant:

Kazutoshi Nakajima, Hamamatsu, JP;

Inventor:

Kazutoshi Nakajima, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Shizuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor photodetectoraccording to the present invention, flat surfaces of three steps with different heights are formed in a top surface portion of a semi-insulating GaAs substrate. An n-type GaAs layer, an i-type GaAs layer, and a p-type GaAs layerare successively deposited on the lower step surface formed in a central region of the semi-insulating GaAs substrate. Furthermore, a p-side ohmic electrodeis provided astride and above a flat surface formed by the p-type GaAs layerand the upper step surface of the semi-insulating GaAs substrate, and an n-side ohmic electrodeis provided astride and above a flat surface formed by the n-type GaAs layerand the middle step surface of the semi-insulating GaAs substrate


Find Patent Forward Citations

Nakajima, Kazutoshi. (2007). Semiconductor photodetector and its production method (U.S. Patent No. 7259439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7259439

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