The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
May. 18, 2005
Kazumasa Nomoto, Kanagawa, JP;
Hiroshi Aozasa, Tokyo, JP;
Ichiro Fujiwara, Kanagawa, JP;
Shinji Tanaka, Kanagawa, JP;
Kazumasa Nomoto, Kanagawa, JP;
Hiroshi Aozasa, Tokyo, JP;
Ichiro Fujiwara, Kanagawa, JP;
Shinji Tanaka, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage layer CS includes a first nitride film CSmade of silicon nitride or silicon oxynitride and a second nitride film CSmade of silicon nitride or silicon oxynitride and having a higher charge trap density than the first nitride film CS. The first nitride film CSis formed by chemical vapor deposition using a first gas which contains a first silicon-containing gas containing chlorine with a predetermined percent composition and a nitrogen-containing gas as starting materials. The second nitride film CSis formed by chemical vapor deposition using a second gas which contains a second silicon-containing gas having a lower chlorine percent composition than the above predetermined percent composition and a nitrogen-containing gas as starting materials.