The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Mar. 31, 2005
Satoshi Aida, Hyogo-ken, JP;
Shigeo Kouzuki, Hyogo-ken, JP;
Satoshi Yanagisawa, Kanagawa-ken, JP;
Masaru Izumisawa, Kanagawa-ken, JP;
Hironori Yoshioka, Hyogo-ken, JP;
Satoshi Aida, Hyogo-ken, JP;
Shigeo Kouzuki, Hyogo-ken, JP;
Satoshi Yanagisawa, Kanagawa-ken, JP;
Masaru Izumisawa, Kanagawa-ken, JP;
Hironori Yoshioka, Hyogo-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
There is provided a power MISFET which includes a semiconductor region of a first conductivity, a semiconductor base region of a second conductivity, a pillar region, a first major electrode region of a first conductivity on the base region, a second major electrode region connected with at least the semiconductor region and a part of the pillar region, a control electrode and an electrode pad connected with the control electrode. The pillar region including a first region of a first conductivity type and a second region of a second conductivity type is not formed under the electrode pad. Also, a method for manufacturing a MISFET is provided.