The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Nov. 02, 2005
Yoshihiko Hanamaki, Tokyo, JP;
Kenichi Ono, Tokyo, JP;
Kimio Shigihara, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Kimitaka Shibata, Tokyo, JP;
Naoyuki Shimada, Tokyo, JP;
Yoshihiko Hanamaki, Tokyo, JP;
Kenichi Ono, Tokyo, JP;
Kimio Shigihara, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Kimitaka Shibata, Tokyo, JP;
Naoyuki Shimada, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.