The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2007

Filed:

Dec. 15, 2005
Applicants:

Scott Stephen Zelakiewicz, Niskayuna, NY (US);

Snezana Bogdanovich, Newark, DE (US);

Aaron Judy Couture, Schenectady, NY (US);

Douglas Albagli, Clifton Park, NY (US);

William Andrew Hennessy, Schenectady, NY (US);

Inventors:

Scott Stephen Zelakiewicz, Niskayuna, NY (US);

Snezana Bogdanovich, Newark, DE (US);

Aaron Judy Couture, Schenectady, NY (US);

Douglas Albagli, Clifton Park, NY (US);

William Andrew Hennessy, Schenectady, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.


Find Patent Forward Citations

Loading…