The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Dec. 17, 2004
Seung Cheol Lee, Ichon-Shi, KR;
Sang Wook Park, Seoul, KR;
Pil Geun Song, Seoul, KR;
Hynix Semiconductor Inc., Kyungki-do, KR;
Abstract
Disclosed herein is a method for forming an isolation film of a semiconductor memory device. According to the disclosure, in a pre-treatment cleaning process performed before a tunnel oxide film is formed, a SC-1 cleaning process is performed at a temperature ranging from 60° C. to 70° C. Therefore, oxide films in a cell region and a peripheral region are recessed even in the SC-1 cleaning process as well as a DHF cleaning process. A DHF cleaning time can be thus reduced. Accordingly, the method can minimize loss of a silicon substrate by DHF and can thus control the depth of a moat.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile