The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Feb. 24, 2005
Tingkai LI, Vancouver, WA (US);
Pooran Chandra Joshi, Vancouver, WA (US);
Wei Gao, Vancouver, WA (US);
Yoshi Ono, Camas, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Tingkai Li, Vancouver, WA (US);
Pooran Chandra Joshi, Vancouver, WA (US);
Wei Gao, Vancouver, WA (US);
Yoshi Ono, Camas, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiOlayer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiOis formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).