The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Sep. 22, 2004
Hak Dong Kim, Suwon-si, KR;
Hak Dong Kim, Suwon-si, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
Methods of forming a device isolation structure in a semiconductor device are disclosed. A disclosed method comprises forming a p-type well and an n-type well in a semiconductor substrate; sequentially depositing a gate insulating layer and a gate electrode material layer; depositing a protective layer on the gate electrode material layer; removing a portion of the protective layer, a portion of the gate electrode material layer, and a portion of the gate insulating layer to expose a surface area of the semiconductor substrate; performing ion implantation and heat treatment processes to form a device isolation structure; forming a gate electrode by removing a portion of the gate electrode material layer; forming an LDD region by implanting low concentration impurity ions in the semiconductor substrate; forming a spacers on a sidewall of the gate electrode; and forming a source/drain region by implanting high concentration impurity ions.