The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7257038 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 14, 2007

Filed:

Jan. 03, 2006
Applicants:

Michael A. Killian, Richmond, VT (US);

Martin Versen, Burlington, VT (US);

Grant Mcneil, Williston, VT (US);

Zach Johnson, Williston, VT (US);

Changduk Kim, South Burlington, VT (US);

Inventors:

Michael A. Killian, Richmond, VT (US);

Martin Versen, Burlington, VT (US);

Grant McNeil, Williston, VT (US);

Zach Johnson, Williston, VT (US);

Changduk Kim, South Burlington, VT (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor integrated circuit memory device, and test method for a memory device are provided in which an external wordline voltage is applied to a wordline of the memory device. A current on the wordline is measured as a result of application of the externally supplied wordline voltage. The measured current is compared to a reference value to determine whether the wordline has a defect, in particular a short-circuit defect. A tester device is connected to the memory device and supplies the external wordline voltage. The current measurement and comparison may be made internally by circuitry on the memory device or externally by circuitry in a tester device.


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