The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Dec. 21, 2005
Sheng Teng Hsu, Camas, WA (US);
Tingkai LI, Vancouver, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Wei Pan, Vancouver, WA (US);
Wei-wei Zhuang, Vancouver, WA (US);
David R. Evans, Beaverton, OR (US);
Masayuki Tajiri, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Tingkai Li, Vancouver, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Wei Pan, Vancouver, WA (US);
Wei-Wei Zhuang, Vancouver, WA (US);
David R. Evans, Beaverton, OR (US);
Masayuki Tajiri, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBaCuO(YBCO), indium oxide (InO), or ruthenium oxide (RuO), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a PrCaMnO(PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.