The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Feb. 05, 2004
Luke J. Mawst, Sun Prairie, WI (US);
Nelson Tansu, Bethlehem, PA (US);
Jerry R. Meyer, Catonsville, MD (US);
Igor Vurgaftman, Odenton, MD (US);
Luke J. Mawst, Sun Prairie, WI (US);
Nelson Tansu, Bethlehem, PA (US);
Jerry R. Meyer, Catonsville, MD (US);
Igor Vurgaftman, Odenton, MD (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Semiconductor optoelectronic devices such as diode lasers are formed on InP substrates with an active region with an InAsN or InGaAsN electron quantum well layer and a GaAsSb or InGaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers.