The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
May. 24, 2005
Applicants:
Mark T. Ramsbey, Sunnyvale, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Mark Chang, Los Altos, CA (US);
Eric Paton, Morgan Hill, CA (US);
Inventors:
Mark T. Ramsbey, Sunnyvale, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Mark Chang, Los Altos, CA (US);
Eric Paton, Morgan Hill, CA (US);
Assignees:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A structure interfaces dual polycrystalline silicon layers. The structure includes a first layer of polycrystalline silicon and a metal interface layer formed on a surface of the first layer of polycrystalline silicon. The structure further includes a second layer of polycrystalline silicon formed on a surface of the interface layer.