The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2007

Filed:

Dec. 28, 2005
Applicant:

Jae-won Han, Suwon, KR;

Inventor:

Jae-Won Han, Suwon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

For a semiconductor device having copper wiring, an exemplary method according to an embodiment of the present invention may include forming a first insulation layer on a silicon substrate having a transistor thereon; forming a contact hole by etching the first insulation layer; forming a metal plug so as to fill the contact hole; forming a second insulation layer on the metal plug; forming a trench exposing an upper surface of the metal plug by partially removing the second insulation layer; sputter-etching an interior wall and bottom surface of the trench with a plasma; and forming a copper line layer so as to fill the sputter-etched trench. According to this method, electrical contact between a metal plug and a copper line layer may be maintained or improved prevented by reducing or removing by-products on the metal plug using the sputter-etching process.


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