The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Dec. 08, 2005
Applicants:
Ki-won Nam, Ichon-shi, KR;
Jung-taik Cheong, Ichon-shi, KR;
Inventors:
Ki-Won Nam, Ichon-shi, KR;
Jung-Taik Cheong, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a hard mask layer on the inter-layer insulation layer; etching the hard mask layer using a contact mask; and etching the inter-layer insulation layer using the hard mask layer as an etch barrier, thereby obtaining an opening wherein the etching of the hard mask layer and the etching of the inter-layer insulation layer are performed in one etch chamber.