The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
May. 03, 2005
Hideki Takeuchi, El Cerrito, CA (US);
Emmanuel P. Quevy, Berkeley, CA (US);
Tsu-jae King, Fremont, CA (US);
Roger T. Howe, Martinez, CA (US);
Hideki Takeuchi, El Cerrito, CA (US);
Emmanuel P. Quevy, Berkeley, CA (US);
Tsu-Jae King, Fremont, CA (US);
Roger T. Howe, Martinez, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.