The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2007

Filed:

Jun. 26, 2003
Applicants:

Masanari Yokogawa, Yamagata, JP;

Hirotaka Hagihara, Yamagata, JP;

Shinya Wagatsuma, Yonezawa, JP;

Koutarou Kitayama, Yamagata, JP;

Chieko Fujiwara, Yamagata, JP;

Inventors:

Masanari Yokogawa, Yamagata, JP;

Hirotaka Hagihara, Yamagata, JP;

Shinya Wagatsuma, Yonezawa, JP;

Koutarou Kitayama, Yamagata, JP;

Chieko Fujiwara, Yamagata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 μm to 1.3 μm.


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