The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2007

Filed:

Dec. 06, 2004
Applicants:

Young-chul Ko, Kyungki-do, KR;

Jin-ho Lee, Kyungki-do, KR;

Chang-soo Lee, Kyungki-do, KR;

Inventors:

Young-chul Ko, Kyungki-do, KR;

Jin-ho Lee, Kyungki-do, KR;

Chang-soo Lee, Kyungki-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon, Kyungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 65/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are an anodic bonding structure, a fabricating method thereof, and a method of manufacturing an optical scanner using the same. Provided anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes at least one dielectric and at least one metal layer deposited between the substrate and the glass substrate, with a dielectric arranged uppermost, wherein the uppermost dielectric and the glass substrate are anodic bonded. Provided method of fabricating an anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes an act of depositing at least one dielectric and at least one metal layer between the substrate and the glass substrate, with dielectric arranged uppermost, and an act of anodic bonding the uppermost dielectric with the glass substrate. In the provided structure of depositing the metal layer and the dielectric between the substrate and the glass substrate, the dielectric and the glass substrate or the dielectric and the metal layer are anodic bonded so that a stable performance is attained to manufacture various micro-electromechanical systems (MEMS) devices.


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