The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Sep. 04, 2002
Applicants:
Ralph H. Johnson, Murphy, TX (US);
Jin K. Kim, St. Louis Park, MN (US);
James K. Guenter, Garland, TX (US);
Inventors:
Ralph H. Johnson, Murphy, TX (US);
Jin K. Kim, St. Louis Park, MN (US);
James K. Guenter, Garland, TX (US);
Assignee:
Finisar Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/12 (2006.01); C30B 25/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.