The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Oct. 21, 2004
Fengyan Zhang, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
Iridium oxide (IrOx) nanowires and a method forming the nanowires are provided. The method comprises: providing a growth promotion film with non-continuous surfaces, having a thickness in the range of 0.5 to 5 nanometers (nm), and made from a material such as Ti, Co, Ni, Au, Ta, polycrystalline silicon (poly-Si), SiGe, Pt, Ir, TiN, or TaN; establishing a substrate temperature in the range of 200 to 600 degrees C.; introducing oxygen as a precursor reaction gas; introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor; using a metalorganic chemical vapor deposition (MOCVD) process, growing IrOx nanowires from the growth promotion film surfaces. The IrOx nanowires have a diameter in the range of 100 to 1000 Å, a length in the range of 1000 Å to 2 microns, an aspect ratio (length to width) of greater than 50:1. Further, the nanowires include single-crystal nanowire cores covered with an amorphous layer having a thickness of less than 10 Å.