The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Dec. 10, 2004
Carsten Schäffer, Sattendorf, AT;
Carsten Schäffer, Sattendorf, AT;
Infineon Technologies AG, Munich, DE;
Abstract
Transistor cells () of a power transistor component are in each case provided with a gate conductor structure that forms a gate electrode () in sections and is connected via a gate cell terminal () to a gate wiring line () led to a gate terminal () of the power transistor component (). The gate conductor structure () has a desired fusible section () with an increased resistance, which is arranged within a cavity. The resistance of the desired fusible section () can be set in such a way that, in the event of a current loading of the magnitude of a value that is typical of a defective gate dielectric (), the gate conductor section () is interrupted in the desired fusible section () and the gate electrode () is disconnected from the gate wiring line (). The power transistor component can be produced with high yield and has a smaller number of failures during application operation.