The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Sep. 22, 2003
Applicants:
Marie Denison, München, DE;
Hannes Estl, Klagenfurt, AT;
Inventors:
Marie Denison, München, DE;
Hannes Estl, Klagenfurt, AT;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract
A quasi-vertical semiconductor component in which, by variation of the layout, the process or the wiring of inner cells, a compensation for a voltage drop along a buried layer is provided in order thus to ensure a similar operating point of the individual inner cells in the well. Therefore, the disadvantages brought about by a voltage drop in the buried layer are ultimately overcome.