The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2007

Filed:

May. 27, 2005
Applicants:

Guang Yang, Annandale, NJ (US);

Taner Dosluoglu, New York, NY (US);

Inventors:

Guang Yang, Annandale, NJ (US);

Taner Dosluoglu, New York, NY (US);

Assignee:

Dialog Imaging Systems GmbH, Kirchheim, Teck-Nabern, DE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pixel image sensor has an isolation barrier and diffusion well connected to a biasing voltage to prevent substrate charge leakage caused by photoelectrons generated in the substrate beneath a photon sensing area of the pixel image sensor from drifting to a storage node. An opaque metallic silicide layer is deposited on and a metal shield is fabricated above the storage node and storage node control transistor switches to prevent light from impinging on the storage node and storage node control transistor switches and thus preventing generation of photoelectrons at the storage node and storage node control transistor switches. A guard ring surrounds the photo sensing area, the storage node, and the storage node control transistor switches and is in contact with the biasing voltage and reduces cross-talk from photoelectrons drifting from adjacent image sensors.


Find Patent Forward Citations

Loading…