The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7253451 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 07, 2007

Filed:

Jun. 28, 2005
Applicants:

Tae-kyung Yoo, Yongin-si, KR;

Eun Hyun Park, Seongnam-si, KR;

Inventors:

Tae-Kyung Yoo, Yongin-si, KR;

Eun Hyun Park, Seongnam-si, KR;

Assignee:

EPIVALLEY Co., Ltd., Kyunggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SiCN(x≧0, y≧0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1−x−y)N(0≦x≦1, 0≦y≦1, 0≦x+y≦1) of the hexagonal structure and SiCN(x≧0, y≧0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SiCN(x≧0, y≧0, x+y>0, z>0) material.


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Yoo, Tae-Kyung. (2007). Iii-nitride semiconductor light emitting device (U.S. Patent No. 7253451). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7253451

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