The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Dec. 23, 2005
Jum Soo Kim, Icheon, KR;
Ji Hyung Yune, Goyang, KR;
Jum Soo Kim, Icheon, KR;
Ji Hyung Yune, Goyang, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
An active region and a trench region are formed on a semiconductor substrate. The trench region is filled with a dielectric material to form an isolation layer. Oxide and polysilicon layers are formed on the semiconductor substrate. A second polysilicon layer, a second oxide layer, and a first polysilicon layer are patterned to form a plurality of gate lines. Deep ion implantation in a deep portion of the active region is performed using a self-aligned source mask. The active region and the trench region are exposed through the self-aligned source mask by etching the isolation layer between the plurality of gate lines using the self-aligned source mask to form a common source region. Ions are implanted in the common source region using the self-aligned source mask.