Method of forming gate insulation film using plasma method of fabricating poly-silicon thin film transistor using the same

Abstract

A method of forming a gate insulation film of a crystallized thin film transistor, is provided, which can enhance an interfacial feature which exists between a gate oxide film and a silicon thin film substrate and which is fatal to performance of the thin film transistor, in the case that crystallization of amorphous silicon is performed by metal induced lateral crystallization (MILC). The gate insulation film formation method includes the steps of: forming an amorphous silicon film on an insulation substrate, and then patterning the amorphous silicon film, to thereby form a semiconductor layer; processing the semiconductor layer made of the amorphous silicon film by an oxygen plasma method, and oxidizing the silicon surface, to thereby form a first silicon oxide film; and mixing gas with silicon and depositing a second silicon oxide film on the first silicon oxide film by a PECVD (Plasma Enhanced Chemical Vapor Deposition) method.