The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Dec. 28, 2004
Kwang Young Ko, Kyunggido, KR;
Kwang Young Ko, Kyunggido, KR;
Dongbu Electronics Co., Ltd, Seoul, KR;
Abstract
The present invention provides a method of fabricating a high-voltage CMOS device, in which an extended drain region failing to enclose a heavily-doped drain region is separated from a high current flow path to enable high electric field concentration and breakdown to occur within a bulk of a silicon substrate and by which device reliability can be enhanced. The present invention includes the steps of forming a pad oxide layer on a substrate, forming a heavily doped drain region, a heavily doped source region, a source region, and an extended drain region failing to enclose the heavily doped drain region by ion implantation using a pattern provided on the pad oxide layer, forming a field oxide layer on a prescribed area of the extended drain region, and forming a gate and a gate spacer over the substrate.