The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7252778 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 07, 2007

Filed:

May. 05, 2004
Applicants:

Hayato Iwamoto, Kanagawa, JP;

Kei Kinoshita, Villach, AT;

Hajime Ugajin, Kanagawa, JP;

Inventors:

Hayato Iwamoto, Kanagawa, JP;

Kei Kinoshita, Villach, AT;

Hajime Ugajin, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid Lat a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L, a diluting liquid Lfor the etchant liquid Lis discharged at a thin portion of the film for processing.


Find Patent Forward Citations

Iwamoto, Hayato. (2007). Etching method and etching device (U.S. Patent No. 7252778). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7252778

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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