The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2007

Filed:

Jun. 05, 2003
Applicant:

James Thomas Doyle, Nederland, CO (US);

Inventor:

James Thomas Doyle, Nederland, CO (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

The leakage current output by a MOS transistor is minimized by varying a back bias voltage across a range of voltages, and detecting the back bias voltage within the range that minimizes the leakage current output by the MOS transistor. The detected back bias voltage is then applied to the MOS transistor.


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