The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2007

Filed:

Apr. 05, 2004
Applicant:

Satoshi Otsuka, Kawasaki, JP;

Inventor:

Satoshi Otsuka, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor device comprises a lower interconnection partwhich is formed on a silicon substrateand includes an inter-layer insulation filmformed of a low-k filmand a hydrophilic insulation filmformed on the low-k filmand an interconnection layerburied in interconnection trenchesformed in the inter-layer insulation filmand having an interconnection pitch which is a first pitch; and an intermediate interconnection partwhich is formed on the lower interconnection partand includes an inter-layer insulation filmformed of low-k filmsan interconnection layerburied in interconnection trenchesformed in the inter-layer insulation filmand having an interconnection pitch which is a second pitch larger than the first pitch, and an SiC filmformed directly on the low-k filmand the interconnection layer


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