The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Jun. 13, 2003
Applicants:
Seiji Sarayama, Miyagi, JP;
Masahiko Shimada, Miyagi, JP;
Hisanori Yamane, Miyagi, JP;
Hirokazu Iwata, Miyagi, JP;
Inventors:
Seiji Sarayama, Miyagi, JP;
Masahiko Shimada, Miyagi, JP;
Hisanori Yamane, Miyagi, JP;
Hirokazu Iwata, Miyagi, JP;
Assignee:
Ricoh Company, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/109 (2006.01); H01L 31/072 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.