The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Jul. 31, 2004
Darius L. Crenshaw, Allen, TX (US);
Byron L. Williams, Plano, TX (US);
Alwin Tsao, Garland, TX (US);
Hisashi Shichijo, Plano, TX (US);
Satyavolu S. Papa Rao, Garland, TX (US);
Kenneth D. Brennan, Plano, TX (US);
Steven A. Lytle, McKinney, TX (US);
Darius L. Crenshaw, Allen, TX (US);
Byron L. Williams, Plano, TX (US);
Alwin Tsao, Garland, TX (US);
Hisashi Shichijo, Plano, TX (US);
Satyavolu S. Papa Rao, Garland, TX (US);
Kenneth D. Brennan, Plano, TX (US);
Steven A. Lytle, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method () of forming a MIM (metal insulator metal) capacitor is disclosed whereby adverse affects associated with copper diffusion are mitigated even as the capacitor is scaled down. A sidewall spacer () is formed against an edge () of a layer of bottom electrode/copper diffusion barrier material (), an edge () of a layer of capacitor dielectric material () and at least some of an edge () of a layer of top electrode material. The sidewall spacer () is dielectric or non-conductive and mitigates 'shorting' currents that can develop between the plates as a result of copper diffusion. Bottom electrode diffusion barrier material () mitigates copper diffusion and/or copper drift, thereby reducing the likelihood of premature device failure.