The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Mar. 14, 2005
Kenichi Tochi, Tokyo, JP;
Takao Noguchi, Tokyo, JP;
Hiroshi Yamazaki, Tokyo, JP;
Ken Unno, Tokyo, JP;
Masahiro Miyazaki, Tokyo, JP;
Shigeru Shoji, Tokyo, JP;
Kenichi Tochi, Tokyo, JP;
Takao Noguchi, Tokyo, JP;
Hiroshi Yamazaki, Tokyo, JP;
Ken Unno, Tokyo, JP;
Masahiro Miyazaki, Tokyo, JP;
Shigeru Shoji, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrOas the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrOis 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.