The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Jun. 09, 2005
Masayuki Sugiura, Kanagawa-ken, JP;
Yasuhiko Kuriyama, Kanagawa-ken, JP;
Toru Sugiyama, Tokyo, JP;
Yoshikazu Tanabe, Kanagawa-ken, JP;
Makoto Shibamiya, Tokyo, JP;
Masayuki Sugiura, Kanagawa-ken, JP;
Yasuhiko Kuriyama, Kanagawa-ken, JP;
Toru Sugiyama, Tokyo, JP;
Yoshikazu Tanabe, Kanagawa-ken, JP;
Makoto Shibamiya, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor apparatus includes a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of the semiconductor substrate; a first electrode pad provided on the semiconductor substrate; a second electrode pad provided on the semiconductor substrate; a strip-like, first conductivity type semiconductor pattern; and a strip-like, second conductivity type semiconductor pattern. The strip-like, first conductivity type semiconductor pattern extends in the periphery region of the semiconductor substrate, and the first electrode pad is electrically connected to one end of the first conductivity type semiconductor pattern. The strip-like, second conductivity type semiconductor pattern constitutes a p-n junction in conjunction with the first conductivity type semiconductor pattern. The first and second electrode pads are electrically connected to both ends of the second conductivity type semiconductor pattern.