The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Oct. 22, 2004
Atsuhiko Kanda, Hyogo, JP;
Tsuyoshi Tanaka, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Yutaka Hirose, Kyoto, JP;
Tomohiro Murata, Osaka, JP;
Atsuhiko Kanda, Hyogo, JP;
Tsuyoshi Tanaka, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Yutaka Hirose, Kyoto, JP;
Tomohiro Murata, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.