The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Sep. 01, 2004
Tomoko Sekiguchi, Hino, JP;
Shinichiro Kimura, Kunitachi, JP;
Renichi Yamada, Fuchu, JP;
Kikuo Watanabe, Sayama, JP;
Hiroshi Miki, Tokyo, JP;
Kenichi Takeda, Tokorozawa, JP;
Tomoko Sekiguchi, Hino, JP;
Shinichiro Kimura, Kunitachi, JP;
Renichi Yamada, Fuchu, JP;
Kikuo Watanabe, Sayama, JP;
Hiroshi Miki, Tokyo, JP;
Kenichi Takeda, Tokorozawa, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is herein a semiconductor device having a DRAM with less scattering of threshold voltage of MISFET in a memory cell and having good charge retainability of a capacitor, and a manufacturing method of the semiconductor device. An anti-oxidation film is formed to the side wall of a gate electrode before light oxidation thereby suppressing the oxidation of the side wall for the gate electrode and decreasing scattering of the thickness of the film formed to the sidewall in an asymmetric diffusion region structure in which the impurity concentration of an n-type semiconductor region and a p-type semiconductor region on the side of the data line is made relatively higher than the impurity concentration in the n-type semiconductor region and p-type semiconductor region on the side of the capacitor, respectively.