The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
May. 26, 2005
Glenn H. Rankin, Menlo Park, CA (US);
Sandeep R. Bahl, Palo Alto, CA (US);
Glenn H. Rankin, Menlo Park, CA (US);
Sandeep R. Bahl, Palo Alto, CA (US);
Avago Technologies General IP (Singapore) Ltd. Pte., Singapore, SG;
Abstract
In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of local crystal modifications in the first Group IV semiconductor in an array. An array of local crystal modifications is formed in the first Group IV semiconductor in accordance with the pattern. The local crystal modifications induce overlapping strain fields that increase the bandgap of the first Group IV semiconductor, create an energy band barrier against transport of minority carriers across the first region. A second region that includes a second Group IV semiconductor that has a bandgap and is doped with a second dopant of a second electrical conductivity type opposite the first conductivity type is formed. Semiconductor devices formed in accordance with this method also are described.